Tuning the vertical location of helical surface states in topological insulator heterostructures via dual-proximity effects

نویسندگان

  • Guangfen Wu
  • Hua Chen
  • Yan Sun
  • Xiaoguang Li
  • Ping Cui
  • Cesare Franchini
  • Jinlan Wang
  • Xing-Qiu Chen
  • Zhenyu Zhang
چکیده

In integrating topological insulators (TIs) with conventional materials, one crucial issue is how the topological surface states (TSS) will behave in such heterostructures. We use first-principles approaches to establish accurate tunability of the vertical location of the TSS via intriguing dual-proximity effects. By depositing a conventional insulator (CI) overlayer onto a TI substrate (Bi₂Se or Bi₂Te₃), we demonstrate that, the TSS can float to the top of the CI film, or stay put at the CI/TI interface, or be pushed down deeper into the otherwise structurally homogeneous TI substrate. These contrasting behaviors imply a rich variety of possible quantum phase transitions in the hybrid systems, dictated by key material-specific properties of the CI. These discoveries lay the foundation for accurate manipulation of the real space properties of TSS in TI heterostructures of diverse technological significance.

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عنوان ژورنال:

دوره 3  شماره 

صفحات  -

تاریخ انتشار 2013